This paper presents a sub-1V delta-sigma modulator (DSM) with power and bandwidth (BW) scalability for IoT applications. It is built around a fully dynamic and low-voltage floating inverter amplifier (LVFIA). To extend the power and BW scalability of the LVFIA, its relatively supply-independent bias current is auto-controlled by DSM's sampling frequency f_s. Dynamic techniques such as auto-zeroing and chopping are applied to achieve low noise. Fabricated in a 130nm CMOS, the proposed sub-1V DSM shows a near-consistent SNDR (90dB) and linearly scalable power and BW (2.5nW/Hz) over a ×30 scaling range of f_s. It achieves Walden FoM and Schreier FoM of 51.3fJ/conv-step and 175.7dB, respectively.

Capacitive touch screens have become the dominant user interface over the past decade. Achieving high framerates with low power consumption remains a critical design goal for touch systems. The conventional charge-recycling technique reduces driving power by 64%, but it relies on off-chip capacitors. To address this issue, we propose a tri-level energy recycling scheme, in which energy released during the 2-to-1 transition is recycled to power the 0-to-1 transition on the complementary channel. This approach achieves a 25% power reduction using on-chip transmission gates. Additionally, a compressive sensing method is introduced to selectively process touched RX channels while bypassing the others, reducing the number of fine ADCs by a factor of four compared to conventional two-step sensing. The proposed techniques are implemented in a 65 nm CMOS process and integrated into a 32×20 channel prototype occupying 2.4 mm². Measurement results show that the chip consumes only 2.6 mW at a framerate of 1513 Hz. The signal-to-noise ratio (SNR) reaches 49.7 dB for finger touch and 28.7 dB for a 1 mm Φ stylus, resulting in an energy efficiency of 10.66 pJ/step.

This article presents a compact sub-1-V bipolar junction transistor (BJT)-based temperature sensor for thermal management applications. To operate from a sub-1-V supply, two capacitors are first pre-charged to a supply-independent initial voltage (> 1 V) by regulated charge pumps (RCPs) and then discharged through two diode-connected BJTs. By using different discharge times, proportional to absolute temperature (PTAT) and complementary to absolute temperature (CTAT) voltages can be generated. These are then read out by an area-and energy-efficient charge-balancing ΔΣ modulator to generate a digital representation of temperature. To reduce its noise, the modulator's first inverter-based integrator employs both chopping and auto-zeroing. Fabricated in a standard 22-nm bulk CMOS process, the sensor occupies 0.01 mm² and consumes 2.9 μW from a 0.8-V supply. It achieves a 1-point trimmed inaccuracy of ± 0.4 °C (3σ) from -40 °C to 125 °C, which is the best reported in sub-65-nm CMOS. It also achieves high energy efficiency, resulting in a resolution figure of merit (FoM) of 0.41

This article presents a 14-bit fully dynamic sensor interface that consists of a switched-capacitor (SC) ΔΣ modulator and a dynamic bandgap reference (BGR). The BGR is implemented by summing the proportional to absolute temperature (PTAT) and complementary to absolute temperature (CTAT) outputs of two PNP-based capacitive DACs. At the sampling rate, the DAC capacitors are pre-charged to the supply and then discharged for a fixed period via PNPs, thus biasing them and simultaneously sampling their base-emitter voltages. By using the modulator's first integrator to sum the DAC outputs, a dynamic BGR can be realized, which does not need additional reference buffers or decoupling capacitors. To make the system fully dynamic, the modulator itself is based on capacitively biased (CB) floating inverter amplifiers (FIAs). Implemented in a standard 130-nm CMOS process, the sensor interface occupies an area of 0.2 mm². It achieves an SNDR of > 84.5 dB over a scalable bandwidth (BW) ranging from 98 Hz to 5.9 kHz while consuming 1.7-50.8 μW. Furthermore, by employing a time-domain temperature-compensation scheme, it achieves a batch-trimmed gain error of ± 0.26% from -40°C to 125 °C.