Free-standing membranes are an exciting recent development in the field of complex oxides, allowing intrinsic material properties and phenomena to be probed in ways that would be difficult or otherwise inaccessible in epitaxially bound heterostructures. By employment of a water-soluble sacrificial layer of Sr₃Al₂O₆, strain-free ultrathin SrRuO₃ membranes have been fabricated that exhibit bulk lattice parameters and ferromagnetism at a Curie temperature of 150 K with the magnetic easy axis oriented 22° off the normal. The presence of sizable negative longitudinal magnetoresistance provides a direct signature of the decisive role played by Weyl Fermions in magnetotransport. In addition, a sign change between the strained films and free-standing SrRuO₃ membranes of in-plane transversal magnetotransport indicates a strong electromechanical coupling, resulting in a change of the Fermi velocity of Weyl Fermions. Our measurements provide a first insight into the magnetoelectric properties of SrRuO₃ membranes, highlighting the influence of the exfoliation process on structural, electronic, and magnetic degrees of freedom.

The proximity of a transition-metal dichalcogenide (TMD) to graphene imprints a rich spin texture in graphene and complements its high-quality charge/spin transport by inducing spin-orbit coupling (SOC). Rashba and valley-Zeeman SOCs are the origin of charge-to-spin conversion mechanisms such as the Rashba-Edelstein effect (REE) and spin Hall effect (SHE). In this work, we experimentally demonstrate for the first time charge-to-spin conversion due to the REE in a monolayer WS ₂-graphene van der Waals heterostructure. We measure the current-induced spin polarization up to room temperature and control it by a gate electric field. Our observation of the REE and the inverse of the effect (IREE) is accompanied by the SHE, which we discriminate by symmetry-resolved spin precession under oblique magnetic fields. These measurements also allow for the quantification of the efficiencies of charge-to-spin conversion by each of the two effects. These findings are a clear indication of induced Rashba and valley-Zeeman SOC in graphene that lead to the generation of spin accumulation and spin current without using ferromagnetic electrodes. These realizations have considerable significance for spintronic applications, providing accessible routes toward all-electrical spin generation and manipulation in two-dimensional materials.