Higher switching speeds and power densities enabled by SiC MOSFETs make accurate, time-resolved junction-Temperature (Tj) estimation under realistic switching conditions increasingly important for performance validation, thermal design, and reliability assessment. This work presents an electro-Thermal co-simulation framework for SiC MOSFET double-pulse testing, combining measured switching waveforms with a compact thermal network (Cauer model) to translate transient switching-loss energy into (Tj) evolution. A Peak-Power-Threshold (PPT) method is introduced to robustly identify the switching interval and compute instantaneous power and switching energies (Eon, Eoff) from experimental data, enabling consistent comparison between measurement and simulation across few operating points. The proposed approach links dynamic loss extraction to junction-Temperature estimation in a unified workflow, supporting more reliable interpretation of double-pulse tests and improving confidence in electro-Thermal estimation for high-performance SiC power converters. ... Read more