CY
C. H. Yang
3 records found
1
We identify the presence of monatomic steps at the Si/SiGe or Si/SiO2 interface as a dominant source of variations in the dephasing time of silicon (Si) quantum dot (QD) spin qubits. First, using atomistic tight-binding calculations we show that the g-factors and their Stark shif
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Valence band holes confined in silicon quantum dots are attracting significant attention for use as spin qubits. However, experimental studies of single-hole spins have been hindered by challenges in fabrication and stability of devices capable of confining a single hole. To full
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We define single electron spin qubits in a silicon metal-oxide-semiconductor double quantum dot system. By mapping the qubit resonance frequency as a function of a gate-induced electric field, the spectrum reveals an anticrossing that is consistent with an intervalley spin-orbit
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