The goal of this Ph.D. research is to develop imaging systems for the multiple beam scanning electron microscope (MBSEM) built in Delft University of Technology. This thesis includes two imaging systems, transmission electron (TE) imaging system, and secondary electron (SE) imaging system. The major conclusions, key results and some suggestions for future improvements are highlighted in this chapter.

Our group is developing a multibeam scanning electron microscope (SEM) with 196 beams in order to increase the throughput of SEM. Three imaging systems using, respectively, transmission electron detection, secondary electron detection, and backscatter electron detection are designed in order to make it as versatile as a single beam SEM. This paper focuses on the realization of the transmission electron imaging system, which is motivated by biologists' interest in the particular contrast this can give. A thin sample is placed on fluorescent material which converts the transmitted electrons to photons. Then, the 196 photon beams are focused with a large magnification onto a camera via a high quality optical microscope integrated inside the vacuum chamber. Intensities of the transmission beams are retrieved from the camera images and constructed to form each beam's image using an off line image processing program. Experimental results prove the working principle of transmission electron imaging and show that details of 10-20 nm in images of biological specimen are visible. Problems encountered in the results are discussed and plans for future improvements are suggested.

Recently we have proposed a new Multi-beam Scanning Electron Microscope (MBSEM) which potentially offers a higher current than a single beam SEM. In this system the primary electron beam is first separated into 196 beams by an Aperture Lens Array and then focused into one single spot by using a second Micro Lens Array (MLA) in the objective lens. This system potentially offers high current (200 nA), medium resolution (50 nm), and low landing energy (500 eV) for inspection tool of semiconductor. Here we report that we have achieved a practical setup, evaluated its performance, found difficulties in operating such a system and we draw conclusions about our proposition.