The photovoltaic (PV) industry has recently become more oriented toward n-type c-Si solar cells. Among the different n-type solar cell architectures, bifacial cells are quickly emerging. The open-rear configuration of a bifacial device results in high transmittance (T) losses at long wavelengths (>1000 nm). This limitation is usually overcome at the module level either by using a bifacial encapsulation or by placing a reflective foil on the rear side. In this paper, we have investigated the application of a distributed Bragg reflector (DBR) and TiO2-based white paint (WP) as alternative metal-free back-reflector options applied to the textured open-rear of bifacial n-Pasha cells. Because of the high T losses at long wavelengths of the DBR applied on textured surface, its design and fabrication is studied in detail. The dielectric (DBR and WP) and optimized Ag back-reflectors, which are used as a reference, are applied to bifacial n-Pasha cells, and their performance is evaluated. In particular, we demonstrate T below 20% at 1200 nm by optimizing the DBR thickness for textured surfaces. In addition, the optimized DBR and WP show performance comparable with a state-of-the-art Ag back-reflector. The highest increase of the conversion efficiency is measured for the WP back-reflector: +0.34% absolute compared with n-Pasha measured with no-additional back-reflector.@en

High quality passivating contacts can be realized by using the combination of a thin interfacial oxide (SiOx) and doped polysilicon (polySi). Recombination losses are minimized by providing very good passivation between the thin hydrogenated oxide and the cSi, a high field effect by the highly doped polySi [1-2], combined with the low level penetration of dopants in the wafer [2-3]. To realize this low level in-diffusion of dopants, several interacting options are evaluated in this work: the quality of the thin oxide layer (growth method), combined with a diffusion blocking method (nitridation), doping concentration levels in the polySi and temperature of diffusion. It is shown that for Phosphorus (P)-doped polySi, in-diffusion can be reduced by adding an i-layer in between the oxide and the highly doped polySi, lowering the overall doping level in the system slightly. For Boron (B)-doped polySi, in-diffusion can be blocked by nitridation of the SiO2 layer.@en