Direct time-of-flight (DTOF) is a prominent depth sensing method in light detection and ranging (LiDAR) applications. Single-photon avalanche diode (SPAD) arrays integrated in DTOF sensors have demonstrated excellent ranging and 3D imaging capabilities, making them promising candidates for LiDARs. However, high background noise due to solar exposure limits their performance and degrades the signal-to-background noise ratio (SBR). Noise-filtering techniques based on coincidence detection and time-gating have been implemented to mitigate this challenge but 3D imaging of a wide dynamic range scene is an ongoing issue. In this paper, we propose a coincidence-based DTOF sensor architecture to address the aforementioned challenges. The architecture is analyzed using a probabilistic model and simulation. A flash LiDAR setup is simulated with typical operating conditions of a wide angle field-of-view (FOV = 40 ° ) in a 50 klux ambient light assumption. Single-point ranging simulations are obtained for distances up to 150 m using the DTOF model. An activity-dependent coincidence is proposed as a way to improve imaging of wide dynamic range targets. An example scene with targets ranging between 8-60% reflectivity is used to simulate the proposed method. The model predicts that a single threshold cannot yield an accurate reconstruction and a higher (lower) reflective target requires a higher (lower) coincidence threshold. Further, a pixel-clustering scheme is introduced, capable of providing multiple simultaneous timing information as a means to enhance throughput and reduce timing uncertainty. Example scenes are reconstructed to distinguish up to 4 distinct target peaks simulated with a resolution of 500 ps. Alternatively, a time-gating mode is simulated where in the DTOF sensor performs target-selective ranging. Simulation results show reconstruction of a 10% reflective target at 20 m in the presence of a retro-reflective equivalent with a 60% reflectivity at 5 m within the same FOV.

This article introduces a modular, direct time-of-flight (TOF) depth sensor. Each module is digitally synthesized and features a 2 × (8 × 8) single-photon avalanche diode (SPAD) pixel array, an edge-sensitive decision tree, a shared time-to-digital converter (TDC), 21-bit per-pixel memory, and in-locus data processing. Each module operates autonomously, by internal data acquisition, management, and storage, being periodically read out by an external access. The prototype was fabricated in a TSMC 3-D-stacked 45/65-nm CMOS technology, featuring backside illumination (BSI) SPAD detectors on the top tier, and readout circuit on the bottom tier. The sensor was characterized by single-point measurements, in two different modes of resolution and range. In low-resolution mode, a maximum of 300-m and 80-cm accuracy was recorded; on the other hand, in high-resolution mode, the maximum range and accuracy were 150 m and 7 cm, respectively. The module was also used in a flexible scanning light detection and ranging (LiDAR) system, where a 256 × 256 depth map, with millimeter precision, was obtained. A laser signature based on pulse-position modulation (PPM) is also proposed, achieving a maximum of 28-dB interference reduction.

We present a high-performance back-illuminated three-dimensional stacked single-photon avalanche diode (SPAD), which is implemented in 45-nm CMOS technology for the first time. The SPAD is based on a P⁺/Deep N-well junction with a circular shape, for which N-well is intentionally excluded to achieve a wide depletion region, thus enabling lower tunneling noise and better timing jitter as well as a higher photon detection efficiency and a wider spectrum. In order to prevent premature edge breakdown, a P-type guard ring is formed at the edge of the junction, and it is optimized to achieve a wider photon-sensitive area. In addition, metal-1 is used as a light reflector to improve the detection efficiency further in backside illumination. With the optimized 3-D stacked 45-nm CMOS technology for back-illuminated image sensors, the proposed SPAD achieves a dark count rate of 55.4 cps/μm² and a photon detection probability of 31.8% at 600 nm and over 5% in the 420-920 nm wavelength range. The jitter is 107.7 ps full width at half-maximum with negligible exponential diffusion tail at 2.5 V excess bias voltage at room temperature. To the best of our knowledge, these are the best results ever reported for any back-illuminated 3-D stacked SPAD technologies.

Gallium nitride (GaN) and its alloys are becoming preferred materials for ultraviolet (UV) detectors due to their wide bandgap and tailorable out-of-band cutoff from 3.4 eV to 6.2 eV. GaN based avalanche photodiodes (APDs) are particularly suitable for their high photon sensitivity and quantum efficiency in the UV region and for their inherent insensitivity to visible wavelengths. Challenges exist however for practical utilization. With growing interests in such photodetectors, hybrid readout solutions are becoming prevalent with CMOS technology being adopted for its maturity, scalability, and reliability. In this paper, we describe our approach to combine GaN APDs with a CMOS readout circuit, comprising of a linear array of 1 × 8 capacitive transimpedance amplifiers (CTIAs), implemented in a 0.35 µm high voltage CMOS technology. Further, we present a simple, yet sustainable circuit technique to allow operation of APDs under high reverse biases, up to ≈80 V with verified measurement results. The readout offers a conversion gain of 0.43 µV/e⁻, obtaining avalanche gains up to 10³. Several parameters of the CTIA are discussed followed by a perspective on possible hybridization, exploiting the advantages of a 3D-stacked technology.