Enhancing the wettability of high aspect-ratio through-silicon vias lined with LPCVD silicon nitride of PE-ALD titanium nitride for void-free bottom-up copper electroplating

Journal Article (2011)
Authors

M Saadaoui (TU Delft - Electronic Components, Technology and Materials)

H van Zeijl (External organisation)

W.H.A. Wien (TU Delft - Electronic Components, Technology and Materials)

HTM Pham (TU Delft - Electronic Components, Technology and Materials)

C. Kwakernaak (OLD Surface and Interface Engineering)

HCM Knoops (External organisation)

WMM Kessels (External organisation)

RMCM van de Sanden (External organisation)

FC Voogt (External organisation)

F Roozeboom (External organisation)

PM Sarro (TU Delft - Electronic Components, Technology and Materials)

Research Group
Electronic Components, Technology and Materials
To reference this document use:
https://doi.org/10.1109/TCPMT.2011.2167969
More Info
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Publication Year
2011
Research Group
Electronic Components, Technology and Materials
Issue number
11
Volume number
1
Pages (from-to)
1728-1738
DOI:
https://doi.org/10.1109/TCPMT.2011.2167969

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