Aluminum-induced iso-epitaxy of silicon for low-temperature fabrication of centimeter-large p+n junctions
Journal Article
(2013)
Authors
A Sakic (TU Delft - Electronic Components, Technology and Materials)
L. Qi (TU Delft - Electronic Components, Technology and Materials)
TLM Scholtes (TU Delft - Electronic Components, Technology and Materials)
J. van der Cingel (TU Delft - Electronic Components, Technology and Materials)
LK Nanver (TU Delft - Electronic Components, Technology and Materials)
Research Group
Electronic Components, Technology and Materials
To reference this document use:
https://doi.org/10.1016/j.sse.2013.02.019
TU Delft Repository resolver:
https://resolver.tudelft.nl/02f73c84-ad2b-4f35-bd1b-85481829ef52
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Publication Year
2013
Language
English
Research Group
Electronic Components, Technology and Materials
Issue number
June 2013
Volume number
84
Pages (from-to)
65-73
DOI:
https://doi.org/10.1016/j.sse.2013.02.019
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