n-Channel MOSFETs fabricated on SiGe dots for strain-enhanced mobility

V. Jovanovic (TU Delft - Electronic Components, Technology and Materials)

C Biasotto (TU Delft - Electronic Components, Technology and Materials)

L. K. Nanver (TU Delft - Electronic Components, Technology and Materials)

J Moers (External organisation)

D Gruetzmacher (External organisation)

J Gerharz (External organisation)

G Mussler (External organisation)

J. van der Cingel (TU Delft - Electronic Components, Technology and Materials)

Jing Guo Zhang (TU Delft - Electronic Components, Technology and Materials)

G. Bauer (External organisation)

OG Schmidt (External organisation)

L Miglio (External organisation)