n-Channel MOSFETs fabricated on SiGe dots for strain-enhanced mobility

Journal article (2010)

Authors

V. Jovanovic Electronic Components, Technology and Materials -

C Biasotto Electronic Components, Technology and Materials -

OG Schmidt External organisation

L Miglio External organisation

L.K. Nanver Electronic Components, Technology and Materials -

J Moers External organisation

D Gruetzmacher External organisation

J Gerharz External organisation

G Mussler External organisation

J. van der Cingel Electronic Components, Technology and Materials -

J. Zhang Electronic Components, Technology and Materials -

G Bauer External organisation

Research Group

Electronic Components, Technology and Materials () (TU Delft)

More Info

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http://resolver.tudelft.nl/uuid:03d7b21e-bf8e-4347-9a21-6884c27db279

Published Date

2010

Language

English

Reuse Rights

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials