G Mussler | TU Delft Repository

GM

G Mussler

Conference paper (2)

Journal article (2)

4 records found

1

Integration of MOSFETs with SiGe dots as stressor material

Journal article (2011) - L.K. Nanver (author), V. Jovanovic (author), L Miglio (author), H Kosina (author), A Marzegalli (author), G Vastola (author), G Mussler (author), J Stangl (author), G Bauer (author), J. van der Cingel (author), E Bonera (author), C Biasotto (author), J Moers (author), D Gruetzmacher (author), JJ Zhang (author), N Hrauda (author), M Stoffel (author), F Pezzoli (author), OG Schmidt (author)

N-channel MOSFETS fabricated on self assembled SiGe dots for strain-enhanced moblity

Conference paper (2010) - V. Jovanovic (author), C Biasotto (author), G Mussler (author), J Stangl (author), G Bauer (author), J. van der Cingel (author), E Bonera (author), L.K. Nanver (author), J Moers (author), D. Grützmacher (author), J. Zhang (author), OG Schmidt (author), L Miglio (author), H Kosina (author), A Marzegalli (author), G Vastola (author)

MOSFETS on self assembled SiGe dots with strain-enhanced mobility

Conference paper (2010) - V. Jovanovic (author), C Biasotto (author), G Bauer (author), OG Schmidt (author), L Miglio (author), L.K. Nanver (author), J Moers (author), D. Grützmacher (author), J Gerharz (author), G Mussler (author), J. van der Cingel (author), J Zhang (author), Z Jianjun (author)

n-Channel MOSFETs fabricated on SiGe dots for strain-enhanced mobility

Journal article (2010) - V. Jovanovic (author), C Biasotto (author), OG Schmidt (author), L Miglio (author), L.K. Nanver (author), J Moers (author), D Gruetzmacher (author), J Gerharz (author), G Mussler (author), J. van der Cingel (author), J. Zhang (author), G Bauer (author)