N-channel MOSFETS fabricated on self assembled SiGe dots for strain-enhanced moblity

Conference paper (2010)

Authors

V. Jovanovic Electronic Components, Technology and Materials -

C Biasotto Electronic Components, Technology and Materials -

G Mussler External organisation

J Stangl External organisation

G Bauer External organisation

J. van der Cingel Electronic Components, Technology and Materials -

E Bonera External organisation

L.K. Nanver Electronic Components, Technology and Materials -

J Moers External organisation

D Grutzmacher External organisation

J. Zhang Electronic Components, Technology and Materials -

OG Schmidt External organisation

L Miglio External organisation

H Kosina External organisation

A Marzegalli External organisation

G Vastola External organisation

Research Group

Electronic Components, Technology and Materials () (TU Delft)

More Info

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To reference this document use:

http://resolver.tudelft.nl/uuid:53747cb7-285f-4947-b593-5d8f482ca050

Published Date

2010

Language

English

Reuse Rights

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials