Integration of MOSFETs with SiGe dots as stressor material

Journal Article (2011)
Author(s)

Lis Nanver (TU Delft - Electronic Components, Technology and Materials)

V. Jovanovic (TU Delft - Electronic Components, Technology and Materials)

C Biasotto (TU Delft - Electronic Components, Technology and Materials)

J Moers (External organisation)

D Gruetzmacher (External organisation)

JJ Zhang (External organisation)

N Hrauda (External organisation)

M Stoffel (External organisation)

F Pezzoli (External organisation)

OG Schmidt (External organisation)

L Miglio (External organisation)

H Kosina (External organisation)

A Marzegalli (External organisation)

G Vastola (External organisation)

G Mussler (External organisation)

J Stangl (External organisation)

G Bauer (External organisation)

J van der Cingel (TU Delft - Electronic Components, Technology and Materials)

E Bonera (External organisation)

Research Group
Electronic Components, Technology and Materials
DOI related publication
https://doi.org/10.1016/j.sse.2011.01.038
More Info
expand_more
Publication Year
2011
Language
English
Research Group
Electronic Components, Technology and Materials
Issue number
1
Volume number
60
Pages (from-to)
75-83

No files available

Metadata only record. There are no files for this record.