Integration of MOSFETs with SiGe dots as stressor material

Journal article (2011)

Authors

L.K. Nanver Electronic Components, Technology and Materials -

V. Jovanovic Electronic Components, Technology and Materials -

L Miglio External organisation

H Kosina External organisation

A Marzegalli External organisation

G Vastola External organisation

G Mussler External organisation

J Stangl External organisation

G Bauer External organisation

J. van der Cingel Electronic Components, Technology and Materials -

E Bonera External organisation

C Biasotto Electronic Components, Technology and Materials -

J Moers External organisation

D Gruetzmacher External organisation

JJ Zhang External organisation

N Hrauda External organisation

M Stoffel External organisation

F Pezzoli External organisation

OG Schmidt External organisation

Research Group

Electronic Components, Technology and Materials () (TU Delft)

To reference this document use:

http://resolver.tudelft.nl/uuid:68cec06f-cda0-473c-b04f-44d5b525f2b2

More Info

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Published Date

2011

Language

English

Reuse Rights

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials