A Fully Integrated Electrostatic Charge Boosting Rectifier for Triboelectric Energy Harvesting

Journal Article (2024)
Author(s)

Wenyu Peng (TU Delft - Electronic Components, Technology and Materials)

X. Yue (TU Delft - Electronic Instrumentation)

Willem Dirk van Driel (TU Delft - Electronic Components, Technology and Materials)

Guo Qi Zhang (TU Delft - Electronic Components, Technology and Materials)

S. Du (TU Delft - Electronic Instrumentation)

Research Group
Electronic Instrumentation
DOI related publication
https://doi.org/10.1109/JSSC.2024.3479072
More Info
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Publication Year
2024
Language
English
Research Group
Electronic Instrumentation
Bibliographical Note
Green Open Access added to TU Delft Institutional Repository as part of the Taverne amendment. More information about this copyright law amendment can be found at https://www.openaccess.nl. Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public. @en
Issue number
6
Volume number
60
Pages (from-to)
2158-2169
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Abstract

The various application scenarios of triboelectric nanogenerator (TENG) have attracted increasing research interest, while one of the biggest challenges is the energy extraction efficiency. Due to the small and time-varying inherent capacitor in a TENG, the previous energy extraction techniques e.g., full-bridge rectifier (FBR) and bias-flip (BF) rectifier, performed not well. To extract more energy from TENG, this article proposed a fully integrated switched-capacitor (SC) rectifier with an electrostatic charge boosting (ECB) technique, achieving simultaneous extraction from the synchronized triboelectric energy and self-excited electrostatic energy. The proposed rectifier was fabricated in a 180-nm BCD process. With the proposed ECB technique, the theoretical analysis and measurements show a quadratically increasing output power with respect to the rectification voltage, attaining a constant maximum power point (MPP) at the breakdown voltage of the circuit. A maximum output power of 127.6 μ W is measured with a TENG fabricated in-house. Compared to a passive FBR, the proposed rectifier enhances the output power by 14 times.

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