Review of Die-Attach Materials for SiC High-Temperature Packaging
Fengze Hou (Chinese Academy of Sciences)
Zhanxing Sun (Chinese Academy of Sciences)
Meiying Su (Chinese Academy of Sciences)
Jiajie Fan (Research Institute of Fudan University, Ningbo, Fudan University)
Xiangan You (Chinese Academy of Sciences)
Jun Li (Chinese Academy of Sciences)
Qidong Wang (Chinese Academy of Sciences)
Liqiang Cao (Chinese Academy of Sciences)
Guo-Qi Zhang (TU Delft - Electronic Components, Technology and Materials)
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Abstract
Silicon carbide (SiC) devices have shown definite advantages over Si counterparts in high-temperature, high-voltage, and high-frequency applications. To fully exploit the potentiality of SiC devices in high temperatures, die-attach materials that can withstand high temperatures for a long time are required in the power electronics packaging. In this article, the high-temperature die-attach materials, such as high-temperature solders and transient liquid-phase bonding materials, were reviewed first. Then, metallic (mainly Ag and Cu) nanoparticles (NPs) sintering technologies were thoroughly overviewed. The metallic NPs sintering materials, metallic NPs sintering process, and interface and reliability were analyzed, respectively. Finally, the challenges and outlook of promising Cu NPs sintering technology were discussed.