MS

Meiying Su

3 records found

Silicon carbide (SiC) devices have shown definite advantages over Si counterparts in high-temperature, high-voltage, and high-frequency applications. To fully exploit the potentiality of SiC devices in high temperatures, die-attach materials that can withstand high temperatures f ...
SiC devices are promising for outperforming Si counterparts in high-frequency applications due to its superior material properties. Conventional wirebonded packaging scheme has been one of the most preferred package structures for power modules. However, the technique limits the ...
In this article, a novel fan-out panel-level printed circuit board (PCB)-embedded package for phase-leg silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module is presented. Electro-thermo-mechanical co-design was conducted, and the maximum p ...