20 μm pitch Cu-to-Cu flip-chip interconnects through Cu nanoparticles sintering
X. Ji (TU Delft - Electronic Components, Technology and Materials)
L. Du (TU Delft - Electronic Components, Technology and Materials)
H.W. Van van Zeijl (TU Delft - Electronic Components, Technology and Materials)
Guo Qi Zhang (TU Delft - Electronic Components, Technology and Materials)
Jaber Derakhshandeh (IMEC-Solliance)
Eric Beyne (IMEC-Solliance)
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Abstract
This report demonstrates an innovative method to achieve large scale 20 μm pitch Cu-Cu direct bonding, utilizing lithographic stencil printing to transfer small-sized nano-copper (CuNPs) paste and employs a thermocompression method for CuNPs sintering to establish interconnections between copper-pillars and CuNPs bumps. Shear tests were conducted to characterize the bonding strength. High-throughput 20 μm pitch copper-to-copper direct bonding enables lower annealing temperatures for bulk-Cu to bulk-Cu bonding. Lithographic stencil printing is used to transfer the CuNPs paste, followed by sintering of the nanoparticles to establish interconnections. Shear tests and cross-section SEM were conducted to characterize the bonding strength and quality.