DC-Readout of Semiconductor Spin Qubits
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G. Kiene (QCD/Sebastiano Lab, TU Delft - QuTech Advanced Research Centre)
O. Pietx i Casas (TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Vandersypen Lab)
M. Babaie (TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Babaie Lab, TU Delft - Electronics)
L. M. K. Vandersypen (TU Delft - QN/Vandersypen Lab, Kavli institute of nanoscience Delft, TU Delft - QCD/Vandersypen Lab, TU Delft - QuTech Advanced Research Centre)
Fabio Sebastiano (TU Delft - Quantum Circuit Architectures and Technology, TU Delft - QuTech Advanced Research Centre, QCD/Sebastiano Lab)
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Abstract
This paper presents extensive guidelines for the design of an integrated DC-readout interface for semiconductor spin qubits. Since the focus is on the readout via a single electron transistor (SET), the SET behavior and performance are first described and modeled, showing that the signal-to-noise ratio (SNR) theoretically achievable by a SET-based DC-readout is significantly beyond the state-of-the-art. Practical circuit architectures for implementing a DC-readout, such as the voltage amplifier, the transimpedance amplifier, the charge sampling, and the current pre-amplifier, are then analyzed by deriving their design equations and trade-offs. As a result, the practical performances of those different solutions are evaluated and compared, thus presenting clear selection criteria for the readout architecture and its design equations given the specific parameters of the SET sensor.
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