A High-Mobility Hole Bilayer in a Germanium Double Quantum Well
A. Tosato (TU Delft - QCD/Scappucci Lab, Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre)
B.M. Ferrari (TU Delft - QCD/Scappucci Lab, Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre)
A. Sammak (Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre, TU Delft - BUS/TNO STAFF)
Alexander R. Hamilton (University of New South Wales)
M. Veldhorst (TU Delft - QN/Veldhorst Lab, Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre)
Michele Virgilio (University of Pisa)
G. Scappucci (TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Scappucci Lab, Kavli institute of nanoscience Delft)
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Abstract
A hole bilayer in a strained germanium double quantum well is designed, fabricated, and studied. Magnetotransport characterization of double quantum well field-effect transistors as a function of gate voltage reveals the population of two hole channels with a high combined mobility of (Formula presented.) and a low percolation density of (Formula presented.). The individual population of the channels from the interference patterns of the Landau fan diagram was resolved. At a density of (Formula presented.) the system is in resonance and an anti-crossing of the first two bilayer subbands is observed and a symmetric-antisymmetric gap of (Formula presented.) is estimated, in agreement with Schrödinger-Poisson simulations.
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