Characterization and model validation of mismatch in nanometer CMOS at cryogenic temperatures

Abstract

The design of cryogenic interface electronics enabling future scalable quantum computers requires the accurate characterization and modeling of nanometer CMOS processes at cryogenic temperatures. To this end, this paper presents the mismatch characterization of 40-nm bulk CMOS transistors over the temperature range from 300 K down to 4.2 K. Measured data confirm that variability increases at cryogenic temperatures, and analysis of such data proves the validity of both the Pelgrom and the Croon models, which describe the mismatch dependency on device area and bias conditions, respectively.