Gate oxide induced switch-on undershoot current observed in thin-film transistors

Journal article (2005)

Authors

F Yan External organisation
P Migliorato External organisation
Y. Hong External organisation
V Rana Electronic Components, Technology and Materials - EEMCS
R. Ishihara Electronic Components, Technology and Materials - EEMCS
Y Hiroshima External organisation
D Abe External organisation
S Inoue External organisation
T Shimoda External organisation
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
More Info
expand_more

Published Date

2005

Language

Undefined/Unknown

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials