YH

Y Hiroshima

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20 records found

Single-grain Si TFTs with ECR-PECVD gate SiO2
High-performance Si thin-film transistors (TFTs) are fabricated inside a single, location-controlled grain with gate SiO/sub 2/ deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD). The position of the large grains is controlled by /spl ...

Single grain Si TFTs and local electrical properties of CSL boundaries

High performance p-channel single-crystalline Si TFT fabricated inside a location-controlled grain by ¿-Czochralski process

Capping layer on thin Si film for µ-Czochralski process with excimer laser crystallization

Single-Grain Si TFTs for flexible electronics and 3D-ICs

Temperature dependent carrier transport in single-crystalline Si TFTs inside a location-controlled grain

Reliability of single-crystalline Si TFTs fabricated inside a location-controlled grain

Process simulation of laser crystallization and analysis of crystallization process of Si films

Reduction of Kink current in single grain TFT's fabricated by u-Czochralski process

Dependence of single-crystalline Si TFT characteristics on the channel position in a location-controlled grain

Automated digital circuits design based on single-grain si TFTs fabricated through u-Czochralski (grain filter) process

Characterization of local electrical property of coincidence site lattice boundary in location-controlled silicon islands by scanning probe microscope

Microstructure characterisation of location-controlled Si-islands crystallised by excimer laser in the µ-Czochralski (grain filter) process

Enlargement of location control grains grown from the grain filter with excimer laser by the capping layer

High performance P-channel single-crystalline Si TFTs fabricated inside a location-controlledfrain by .-Czochralski process

Single-grain Si thin film transistors SPICE model, analog and RF circuit applications

Single grain CMOS TFT inverter inside a location-controlled grain by µ-Czochralski process

Local electrical property of coincidence site lattice boundary in location-controlled silicon islands by scanning spread resistance microscopy

High performance single grain SI TFTs inside a location-controlled grain by µ-Czochralski process with capping-layer

Gate oxide induced switch-on undershoot current observed in thin-film transistors