Characterization of local electrical property of coincidence site lattice boundary in location-controlled silicon islands by scanning probe microscopy

Single grain Si TFTs and local electrical properties of CSL boundaries

Single-grain Si thin film transistors SPICE model, analog and RF circuit applications

Single-Grain Si TFTs for flexible electronics and 3D-ICs

Ingle-Grain Si TFTs and Circuits for Flexible Electronics and 3D-ICs

Microstructure characterization of location-controlled Si-islands crystallized by excimer laser in the mu-Czochralski (grain filter) process

Local electrical properties of coincidence site lattice boundaries in location-controlled silicon islands by scanning capacitance microscopy

Single-grain Si TFTs and circuits fabricated through advanced excimer-laser crystallization

High Performance Single Grain Si TFTs Inside a Location-Controlled Grain by Micro-Czochralski Process with Capping Layer

Local electrical property of coincidence site lattice boundary in location-controlled silicon islands by scanning spread resistance microscopy

Characterization of local electrical property of coincidence site lattice boundary in location-controlled silicon islands by scanning probe microscope

Automated digital circuits design based on single-grain si TFTs fabricated through u-Czochralski (grain filter) process

Influences of the capping layer on the grain growth with micro-Czochralski process during excimer-laser crystallization

Capping layer on thin Si film for ¿-Czochralski process with excimer laser crystallization

Effects of capping layer on grain growth with ¿-Czochralski process during excimer laser crystallization

Capping layer on thin Si film for µ-Czochralski process with excimer laser crystallization

High performance single grain SI TFTs inside a location-controlled grain by µ-Czochralski process with capping-layer

Electrical property of coincidence site lattice grain boundary in location-controlled Si island by excimer-laser crystallization

Gate oxide induced switch-on undershoot current observed in thin-film transistors

Dependence of single-crystalline Si TFT characteristics on the channel position inside a location-controlled grain