Advanced Testing and Reliability Enhancements for RRAMs

Abstract

This dissertation, conducted within the discipline of Electronic Science and Technology (specialization in Microelectronics and Solid-State Electronics), focuses on Resistive Random Access Memory (RRAM), an emerging non-volatile memory technology known for its high density and zero static power consumption. RRAM enables fast write and read operations in the nanosecond range and supports Computation-in-Memory (CIM), making it a strong candidate to replace Flash or even Dynamic Random Access Memory (DRAM). Recognizing its potential, both academic institutions and industry leaders have been actively developing RRAM prototypes, with some already reaching the commercial market. To ensure reliability, high-quality testing is essential for guaranteeing product quality.

This dissertation mainly focuses on developing effective test methodologies and robust designs for RRAMs. We begin by examining the RRAM manufacturing process and identifying potential physical defects at each stage through a comprehensive literature review and silicon measurements. To facilitate in-depth analysis, we develop a complete and systematic RRAM simulation platform, integrating a MATLAB-based simulation controller and fault analysis scripts integrated with a complete RRAM circuit design. The controller automates and manages all simulation procedures, while the circuit design comprises a 1T-1R memory array along with essential peripheral components such as write drivers and sense amplifiers. To achieve fast and accurate electrical simulations, we introduce two compact models for RRAMs. These models are optimized and calibrated using extensive measurement data from RRAM devices. We further calibrate the model with industrial measurements from ST Microelectronics. It enables robust device/circuit co-design, accounting for PVT variations and ensuring the reliability and efficiency of RRAM systems.....