Silicon carbide-on-insulator thermal-piezoresistive resonator for harsh environment application
Baoyun Sun (TU Delft - Electronic Components, Technology and Materials, China University of Petroleum (East China))
Jiarui Mo (TU Delft - Electronic Components, Technology and Materials)
Hemin Zhang (Katholieke Universiteit Leuven)
Henk W. van Zeijl (TU Delft - Electronic Components, Technology and Materials)
Willem D. van Driel (TU Delft - Electronic Components, Technology and Materials)
Guoqi Zhang (TU Delft - Electronic Components, Technology and Materials)
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Abstract
The thermal-piezoresistive effect in silicon (Si) has attracted great attention toward high-performance resonant devices but still faces major challenges for harsh environment applications. Instead of using Si, this paper, for the first time, reports a thermal-piezoresistive resonator based on a silicon carbide-on-insulator (SiCOI) platform. The resonance frequency simulation, CMOS-compatible fabrication, and thermoresistive properties characterization of the proposed SiCOI resonator are presented. The experimental results show linear current-voltage characteristics and a constant temperature coefficient of resistance (TCR) up to 200 °C.