BS
B. Sun
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1
Conference paper
(2023)
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Baoyun Sun, Jiarui Mo, Hemin Zhang, Henk W. van Zeijl, Willem D. van Driel, Guoqi Zhang
The thermal-piezoresistive effect in silicon (Si) has attracted great attention toward high-performance resonant devices but still faces major challenges for harsh environment applications. Instead of using Si, this paper, for the first time, reports a thermal-piezoresistive resonator based on a silicon carbide-on-insulator (SiCOI) platform. The resonance frequency simulation, CMOS-compatible fabrication, and thermoresistive properties characterization of the proposed SiCOI resonator are presented. The experimental results show linear current-voltage characteristics and a constant temperature coefficient of resistance (TCR) up to 200 °C.
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The thermal-piezoresistive effect in silicon (Si) has attracted great attention toward high-performance resonant devices but still faces major challenges for harsh environment applications. Instead of using Si, this paper, for the first time, reports a thermal-piezoresistive resonator based on a silicon carbide-on-insulator (SiCOI) platform. The resonance frequency simulation, CMOS-compatible fabrication, and thermoresistive properties characterization of the proposed SiCOI resonator are presented. The experimental results show linear current-voltage characteristics and a constant temperature coefficient of resistance (TCR) up to 200 °C.