A Switch-Bank Approach for High-Power, High-Resolution, Fully-Digital Transmitters
R.J. Bootsman (TU Delft - Electronics)
D.P.N. Mul (TU Delft - Electronics)
M.R. Beikmirza (TU Delft - Electronics)
O. El Boustani
B. van Velzen (Ampleon Netherlands)
D. Maassen (Ampleon Netherlands)
Y. Shen (TU Delft - Electronics)
S.M. Alavi (TU Delft - Electronics)
L.C.N. de Vreede (TU Delft - Electronics)
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Abstract
An implementation strategy for high-power, high resolution, fully digital transmitters (DTX) is proposed. It is based on a high-speed CMOS controller featuring a high-density flip-chip interconnect to an LDMOS power MMIC containing large arrays of custom low-VT LDMOS gate segments configured in RF-power switch banks. Using a two-level thermometer approach and a novel symmetric control scheme for the activation of the gate segments, a high-resolution 11-bit DTX switch bank is realized. It can provide peak RF powers >10 W at 45/40% peak drain/system efficiency at 3.525 GHz.