Single-crystalline Si CMOS TFT circuit fabricated inside a location-controlled grain by m-Czochralski process
Conference Paper
(2004)
Author(s)
V Rana (TU Delft - Electronic Components, Technology and Materials)
R. Ishihara (TU Delft - Electronic Components, Technology and Materials)
Y Hiroshima (External organisation)
D Abe (External organisation)
S Inoue (External organisation)
T Shimoda (External organisation)
JW Metselaar (TU Delft - Electronic Components, Technology and Materials)
C.I.M. Beenakker (TU Delft - Electronic Components, Technology and Materials)
Research Group
Electronic Components, Technology and Materials
To reference this document use:
https://resolver.tudelft.nl/uuid:8a57c41f-3e88-4491-bc89-aa7d2b718133
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Publication Year
2004
Research Group
Electronic Components, Technology and Materials
Pages (from-to)
662-665
ISBN (print)
90-73461-43-X
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