A Review on Gate Oxide Failure Mechanisms of Silicon Carbide Semiconductor Devices
Jinglin Li (TU Delft - Electronic Components, Technology and Materials)
Aditya Shekhar (TU Delft - DC systems, Energy conversion & Storage)
WD van Driel (TU Delft - Electronic Components, Technology and Materials)
Guo-Qi Zhang (TU Delft - Electronic Components, Technology and Materials)
More Info
expand_more
Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.
Abstract
In this article, we provide a comprehensive review of defect formation at the atomic level in interfaces and gate oxides, focusing on two primary defect types: interface traps and oxide traps. We summarize the current theoretical models and experimental observations related to these intrinsic defects, as they critically impact device performance and reliability. By integrating theoretical insights with experimental data, this review provides a thorough understanding of the atomic-scale interactions that govern defect formation.