High performance P-channel single-crystalline Si TFTs fabricated inside a location-controlledfrain by .-Czochralski process

Journal article (2004)

Authors

V Rana Electronic Components, Technology and Materials - EEMCS
R. Ishihara Electronic Components, Technology and Materials - EEMCS
Y Hiroshima External organisation
D Abe External organisation
S Inoue External organisation
T Shimoda External organisation
JW Metselaar Electronic Components, Technology and Materials - EEMCS
C.I.M. Beenakker Electronic Components, Technology and Materials - EEMCS
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
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Published Date

2004

Language

Undefined/Unknown

Reuse Rights

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials