High performance P-channel single-crystalline Si TFTs fabricated inside a location-controlledfrain by .-Czochralski process
Journal Article
(2004)
Author(s)
V Rana (TU Delft - Electronic Components, Technology and Materials)
R Ishihara (TU Delft - Electronic Components, Technology and Materials)
Y Hiroshima (External organisation)
D Abe (External organisation)
S Inoue (External organisation)
T Shimoda (External organisation)
JW Metselaar (TU Delft - Electronic Components, Technology and Materials)
C.I.M. Beenakker (TU Delft - Electronic Components, Technology and Materials)
Research Group
Electronic Components, Technology and Materials
To reference this document use:
https://resolver.tudelft.nl/uuid:c4b2e3bd-6ba1-4261-a1a9-a591a8116920
More Info
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Publication Year
2004
Research Group
Electronic Components, Technology and Materials
Issue number
11
Volume number
87
Pages (from-to)
1943-1947
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