Material properties of LPCVD processed n-type polysilicon passivating contacts and its application in PERPoly industrial bifacial solar cells

Journal Article (2017)
Author(s)

Maciej K. Stodolny (ECN Solar Energy)

John Anker (ECN Solar Energy)

Bart L.J. Geerligs (ECN Solar Energy)

Gaby J.M. Janssen (ECN Solar Energy)

Bas W.H. Van De Loo (Eindhoven University of Technology)

Jimmy Melskens (Eindhoven University of Technology)

Rudi Santbergen (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Olindo Isabella (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Jurriaan Schmitz (University of Twente)

Martijn Lenes (Tempress Systems)

Jan Marc Luchies (Tempress Systems)

Wilhelmus M.M. Kessels (Eindhoven University of Technology)

Ingrid Romijn (ECN Solar Energy)

Research Group
Photovoltaic Materials and Devices
DOI related publication
https://doi.org/10.1016/j.egypro.2017.09.250 Final published version
More Info
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Publication Year
2017
Language
English
Research Group
Photovoltaic Materials and Devices
Journal title
Energy Procedia
Volume number
124
Pages (from-to)
635-642
Downloads counter
345
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Abstract

We present a detailed material study of n+-type polysilicon (polySi) and its application as a carrier selective rear contact in a bifacial n-type solar cell comprising fire-through screen-printed metallization and 6" Cz wafers. The cells were manufactured with low-cost industrial process steps yielding Vocs from 676 to 683 mV and Jscs above 39.4 mA/cm2 indicating an efficiency potential of 22%. The aim of this study is to understand which material properties determine the performance of POCl3-diffused (n-type) polySi-based passivating contacts and to find routes to improve its use for industrial PERPoly (Passivated Emitter Rear PolySi) cells from the point of view of throughput, performance, and bifacial application. This paper reports on correlations between the parameters used for low pressure chemical vapour deposition (LPCVD), annealing, and doping on optical, structural, and electronic properties of the polySi-based passivating contact and the subsequent influence on the solar cell parameters.