An experimental investigation to verify the suitability of MoOx as the hole collection layer for a-Si:H based thin film photovoltaic cell is carried out. The photovoltaic cell investigated has the structure of MoOx (hole collection layer) / intrinsic a-Si:H (photoactive layer) / phosphorus doped a-Si:H (electron collection layer) / Ag (back reflector electrode); all deposited in that order onto an Asahi glass (type U) substrate, which is also acting as the transparent front electrode for the cell. The effects of different post deposition annealing temperatures are investigated. The highest efficiency values are obtained for the cells annealed at 120°C. For the photovoltaic cell with 100 nm thick photoactive layer, the highest efficiency is measured to be 6.46 % with an open current voltage (Voc) of 827 mV and a short current density of (Jsc) of 10.44 mA/cm2. For the photovoltaic cell with 300 nm thick photoactive layer, the highest efficiency is measured to be 7.93 % with Voc of 818 mV and Jsc of 13.24 mA/cm2. The efficiency measurements are carried out under AM1.5 test conditions. Jsc values are corrected according to the external quantum efficiency measurements of the cells in the AM1.5 photovoltaic spectrum region between 270 nm and 800 nm. Compared to the reference cell with boron doped μ-SiOx layer acting as the hole collection layer, the cell with MoOx hole collection layer has similar FF, lower Voc, higher Jsc for wavelength up to the green light region of the AM1.5 spectrum and lower Jsc for the longer wavelengths.@en

An ultra-thin LiF layer in conjunction with an Al layer is employed as the electron collector for the a-Si:H based single-junction thin film photovoltaic cell. The cell has the structure of boron doped μ-SiOx (hole collector) - intrinsic a-Si:H (photoactive layer) - LiF / Al (electron collector and back electrode). The substrate used is U type Asahi glass, which is also acting as the transparent front electrode. For the cell with the 1.5 nm thick LiF layer, annealed at 120°C, the open current voltage (VOC) of 0.936 V, the short current density (JSC) of 13.598 mA/cm2, and the fill factor (FF) of 0.690 are achieved. The JSC and VOC values are comparable to the values measured for the a-Si:H based p-i-n reference cell, but the FF value is found to be lower, which is attributed to the losses due to recombination at the intrinsic a-Si:H / LiF / Al junction. The current versus voltage measurements are carried out under the standard test conditions. The JSC values are corrected according to the external quantum efficiency measurements of the cells in the AM1.5 spectrum region between 270 nm and 800 nm.@en

The nanostructure of hydrogenated amorphous silicon (a-Si:H) is studied by means of doppler broadening positron annihilation spectroscopy (DB-PAS) and Fourier transform infrared (FTIR) spectroscopy. The evolution of open volume deficiencies is monitored during annealing, demonstrating that small vacancies and other small vacancy clusters that are initially present in the a-Si:H nanostructure agglomerate into larger vacancy clusters. The migration of open volume deficiencies is less pronounced for a-Si:H deposited at higher hydrogen-to-silane gas flow rate ratio, R. FTIR spectroscopy reveals the presence of a peculiar peak in the refractive index in the infrared - and hence the calculated mass density - which occurs just before H effusion from the films starts. The combined results of DB-PAS and FTIR spectroscopy indicate that a stress buildup caused by the accumulation of H2 in agglomerating vacancies during annealing can explain the sudden mass density increase. At higher temperatures, stress is released with the onset of H effusion. The H effusion consists of a two-stage process involving small open volume deficiencies and nanosized voids, contrasting earlier interpretations. The reduced amount of hydrogen migration and enhanced hydrogen passivation degree are suggested as key factors to the reduced light-induced degradation associated with increased R values.@en

We present a detailed material study of n+-type polysilicon (polySi) and its application as a carrier selective rear contact in a bifacial n-type solar cell comprising fire-through screen-printed metallization and 6" Cz wafers. The cells were manufactured with low-cost industrial process steps yielding Vocs from 676 to 683 mV and Jscs above 39.4 mA/cm2 indicating an efficiency potential of 22%. The aim of this study is to understand which material properties determine the performance of POCl3-diffused (n-type) polySi-based passivating contacts and to find routes to improve its use for industrial PERPoly (Passivated Emitter Rear PolySi) cells from the point of view of throughput, performance, and bifacial application. This paper reports on correlations between the parameters used for low pressure chemical vapour deposition (LPCVD), annealing, and doping on optical, structural, and electronic properties of the polySi-based passivating contact and the subsequent influence on the solar cell parameters.@en

Recent studies showed that positron annihilation methods can provide key insights into the nanostructure and electronic structure of thin film solar cells. In this study, positron annihilation lifetime spectroscopy (PALS) is applied to investigate CdSe quantum dot (QD) light absorbing layers, providing evidence of positron trapping at the surfaces of the QDs. This enables one to monitor their surface composition and electronic structure. Further, 2D-Angular Correlation of Annihilation Radiation (2D-ACAR) is used to investigate the nanostructure of divacancies in photovoltaic-high-quality a-Si:H films. The collected momentum distributions were converted by Fourier transformation to the direct space representation of the electron-positron autocorrelation function. The evolution of the size of the divacancies as a function of hydrogen dilution during deposition of a-Si:H thin films was examined. Finally, we present a first positron Doppler Broadening of Annihilation Radiation (DBAR) study of the emerging class of highly efficient thin film solar cells based on perovskites.@en

The degradation of hybrid perovskite films when exposed to ambient air is a major challenge for the development of perovskite-based photovoltaics at large scale. At present, little is known about the environmental degradation of perovskite films associated with the development of structural defects or open volumes (such as atomic vacancies, voids, crystallographic defects and grain boundary defects) in the lattice, and about the depth dependence of the structural degradation. Therefore, in this work, we use Doppler broadening-positron annihilation spectroscopy (DB-PAS) depth-profiling to gain insight into the structural degradation of CH 3 NH 3 PbI 3-x Cl x perovskite when exposed to ambient air. In parallel, we investigate the effect of ultrathin (<1 nm) atomic layer deposited (ALD) Al 2 O 3 processed directly on top of the perovskite as a means to suppress the degradation process. Specifically, we infer that the perovskite degradation involves changes in open volumes in its crystal lattice. This could be caused by the ingress of H 2 O molecules into the cation vacancies. In parallel, chemical changes in the perovskite films upon decomposition are observed, accompanied by a decrease in the film thickness as a function of air exposure time. When the perovskite films are decorated with ALD Al 2 O 3 , the latter delays the thickness reduction of the perovskite layer during air exposure and also suppresses the changes in its open volumes and chemical transformations. Our findings illustrate that an improved understanding of the perovskite degradation process can be obtained using DB-PAS, especially when combined with other thin film characterization techniques, such as X-ray diffraction and X-ray photoelectron spectroscopy. @en