Epitaxial growth of large-area p+n diodes at 400 ºC by aluminum-induced crystallization
Conference Paper
(2012)
Author(s)
A Sakic (TU Delft - Electronic Components, Technology and Materials)
L. Qi (TU Delft - Electronic Components, Technology and Materials)
TLM Scholtes (TU Delft - Electronic Components, Technology and Materials)
J. van der Cingel (TU Delft - Electronic Components, Technology and Materials)
LK Nanver (TU Delft - Electronic Components, Technology and Materials)
Research Group
Electronic Components, Technology and Materials
DOI related publication
https://doi.org/10.1109/ESSDERC.2012.6343354
To reference this document use:
https://resolver.tudelft.nl/uuid:cb4f8490-1fd7-4077-bea0-d1a53040b8f5
More Info
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Publication Year
2012
Language
English
Research Group
Electronic Components, Technology and Materials
Pages (from-to)
145-148
ISBN (print)
978-1-4673-1707-8
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