Single-Step CMOS Compatible Fabrication of High Aspect Ratio Microchannels Embedded in Silicon

Conference paper (2017)

Authors

M.M. Kluba Electronic Components, Technology and Materials - EEMCS
A. Arslan Philips Healthcare
R. Stoute TNO
J. Muganda Eindhoven University of Technology
R. Dekker Electronic Components, Technology and Materials - EEMCS
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
Copyright: © 2017 M.M. Kluba, A. Arslan, R. Stoute, James Muganda, R. Dekker
DOI
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https://doi.org/10.3390/proceedings1040291
HAR Embedded microchannel Mesh mask Single-step DRIE (Bosch process)
More Info
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Published Date

2017

Language

English

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

This paper presents a new method for the CMOS compatible fabrication of microchannels integrated into a silicon substrate. In a single-step DRIE process (Deep Reactive Ion Etching) a network of microchannels with High Aspect Ratio (HAR) up to 10, can be etched in a silicon substrate through a mesh mask. In the same single etching step, multidimensional microchannels with various dimensions (width, length, and depth) can be obtained by tuning the process and design parameters. These fully embedded structures enable further wafer processing and integration of electronic components like sensors and actuators in wafers with microchannels.