Electrical Control of Uniformity in Quantum Dot Devices
M. Meyer (Kavli institute of nanoscience Delft, TU Delft - QCD/Veldhorst Lab, TU Delft - QuTech Advanced Research Centre)
C.C. Déprez (TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Veldhorst Lab, Kavli institute of nanoscience Delft)
Timo R. van Abswoude (Kavli institute of nanoscience Delft, Student TU Delft)
Ilja N. Meijer (Kavli institute of nanoscience Delft, Student TU Delft)
Dingshan Liu (Student TU Delft, Kavli institute of nanoscience Delft)
C.A. Wang (TU Delft - QCD/Veldhorst Lab, TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft)
S. Karwal (TU Delft - BUS/TNO STAFF, TU Delft - QuTech Advanced Research Centre)
S.D. Oosterhout (TU Delft - BUS/TNO STAFF)
F. Borsoi (Kavli institute of nanoscience Delft, TU Delft - QCD/Veldhorst Lab, TU Delft - QuTech Advanced Research Centre)
A. Sammak (TU Delft - BUS/TNO STAFF, TU Delft - QuTech Advanced Research Centre)
N.W. Hendrickx (TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft, TU Delft - QCD/Veldhorst Lab)
G. Scappucci (Kavli institute of nanoscience Delft, TU Delft - QCD/Scappucci Lab, TU Delft - QuTech Advanced Research Centre)
M. Veldhorst (Kavli institute of nanoscience Delft, TU Delft - QN/Veldhorst Lab, TU Delft - QuTech Advanced Research Centre)
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Abstract
Highly uniform quantum systems are essential for the practical implementation of scalable quantum processors. While quantum dot spin qubits based on semiconductor technology are a promising platform for large-scale quantum computing, their small size makes them particularly sensitive to their local environment. Here, we present a method to electrically obtain a high degree of uniformity in the intrinsic potential landscape using hysteretic shifts of the gate voltage characteristics. We demonstrate the tuning of pinch-off voltages in quantum dot devices over hundreds of millivolts that then remain stable at least for hours. Applying our method, we homogenize the pinch-off voltages of the plunger gates in a linear array for four quantum dots, reducing the spread in pinch-off voltages by one order of magnitude. This work provides a new tool for the tuning of quantum dot devices and offers new perspectives for the implementation of scalable spin qubit arrays.
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