Low percolation density and charge noise with holes in germanium
M. Lodari (TU Delft - QCD/Scappucci Lab, TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft)
Nico W. Hendrickx (TU Delft - QCD/Veldhorst Lab, TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft)
William I.L. Lawrie (TU Delft - QCD/Veldhorst Lab, TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft)
T. K. Hsiao (TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft, TU Delft - QCD/Vandersypen Lab)
L. M. K. Vandersypen (TU Delft - QuTech Advanced Research Centre, TU Delft - QN/Vandersypen Lab, Kavli institute of nanoscience Delft)
A Sammak (TU Delft - QuTech Advanced Research Centre, TU Delft - BUS/TNO STAFF)
Menno Veldhorst (TU Delft - QuTech Advanced Research Centre, TU Delft - QN/Veldhorst Lab, Kavli institute of nanoscience Delft)
Giordano Scappucci (TU Delft - QCD/Scappucci Lab, Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre)
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Abstract
We engineer planar Ge/SiGe heterostructures for low disorder and quiet hole quantum dot operation by positioning the strained Ge channel 55 nm below the semiconductor/dielectric interface. In heterostructure field effect transistors, we measure a percolation density for two-dimensional hole transport of 2.1 × 10 10 cm−2 , indicative of a very low disorder potential landscape experienced by holes in the buried Ge channel. These Ge heterostructures support quiet
operation of hole quantum dots and we measure an average charge noise level of √SE = 0.6 μeV/√Hz at 1 Hz, with the lowest level below our detection limit√SE = 0.2 μeV/√Hz. These results establish planar Ge as a promising platform for scaledtwo-dimensional spin qubit arrays
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