Ultra-Low-Noise Cryogenic Multilevel Memristors for Sub-100 μV Spin Qubit Biasing
Erbing Hua (TU Delft - Electrical Engineering, Mathematics and Computer Science, TU Delft - Electrical Engineering, Mathematics and Computer Science)
Stijn Heemskerk (Student TU Delft)
Nikolaj Nitzsche (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Wagno Braganca (TU Delft - QID/Ishihara Lab, TU Delft - QuTech Advanced Research Centre)
Hanzhi Xun (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Ali Kaichouhi (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Ryoichi Ishihara (TU Delft - QID/Ishihara Lab, TU Delft - Electrical Engineering, Mathematics and Computer Science, TU Delft - QuTech Advanced Research Centre)
More Info
expand_more
Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.
Abstract
We demonstrate interface-enhanced memristors (OxReRAM) tailored for cryogenic spin-qubit control. By engineering a sparse filament network, our devices achieve eight nonvolatile resistance levels with an ultra-low read noise rate of around 0.3 %. When embedded in a cryogenic gain stage with RL = 30 kΩ and Vin = 0.3 V, it will deliver a ±1 V output range and sub-100-μV resolution using only six memristors per channel. This single-line biasing architecture will reduce wires, paving the way for large-scalce quantum processors.
Files
File under embargo until 30-07-2026