Single-crystalline Si thin film transistors with electron cyclotron resonance plasma enhanced chemical vapor deposited gate SiO2

Ishihara, R.; van Dijk, BD; van der Wilt, PC; Metselaar, JW; Beenakker, C.I.M.; Hiroshima, Y; Abe, D; Higashi, S; Inoue, S; Shimoda, T

Single-crystalline Si thin film transistors with electron cyclotron resonance plasma enhanced chemical vapor deposited gate SiO2

Conference paper (2002)

Authors

R. Ishihara Electronic Components, Technology and Materials

BD van Dijk Electronic Components, Technology and Materials

PC van der Wilt Electronic Components, Technology and Materials

JW Metselaar Electronic Components, Technology and Materials

C.I.M. Beenakker Electronic Components, Technology and Materials

Y Hiroshima External organisation

D Abe External organisation

S Higashi External organisation

S Inoue External organisation

T Shimoda External organisation

Research Group

Electronic Components, Technology and Materials

Elektrotechniek Techniek

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Published Date

2002

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Research Group

Electronic Components, Technology and Materials

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