Print Email Facebook Twitter A CMOS Temperature Sensor with a 49fJ·K2 Resolution FoM Title A CMOS Temperature Sensor with a 49fJ·K2 Resolution FoM Author Pan, S. (TU Delft Electronic Instrumentation) Jiang, H. (TU Delft Electronic Instrumentation) Makinwa, K.A.A. (TU Delft Microelectronics) Department Microelectronics Date 2017 Abstract This paper presents the most energy-efficient CMOS temperature sensor ever reported, with a resolution FoM of 49fJ·K2, 2.7× better than the state-of-the-art. It consists of a Wheatstone bridge made from poly-silicon resistors, which is readout by a 2nd-order Continuous-Time Delta-Sigma modulator (CTDSM). This approach leads to a high resolution (160μK in 10ms) and a low supply-voltage sensitivity (< 20mK/V at room temperature). Subject Bridge circuitsTemperature sensorsResistorsEnergy resolutionTemperature measurementEnergy efficiencySensitivity To reference this document use: http://resolver.tudelft.nl/uuid:e72a946f-062b-48b6-be70-a60454a89034 DOI https://doi.org/10.23919/vlsic.2017.8008557 Publisher IEEE, Piscataway, NJ ISBN 978-4-86348-606-5 Source Digest of Technical Papers - 2017 Symposium on VLSI Circuits Event 2017 Symposium on VLSI Technology and Circuits, 2017-06-05 → 2017-06-08, Kyoto, Japan Bibliographical note C7-3 Part of collection Institutional Repository Document type conference paper Rights © 2017 S. Pan, H. Jiang, K.A.A. Makinwa Files PDF VLSI2017_C7_3.pdf 635.18 KB Close viewer /islandora/object/uuid:e72a946f-062b-48b6-be70-a60454a89034/datastream/OBJ/view