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Tous, Loic (author), Govaert, Jonathan (author), Harrison, Samuel (author), Carrière, Carolyn (author), Barth, Vincent (author), Giglia, Valentin (author), Buchholz, Florian (author), Chen, N. (author), Gordon, I.M.F. (author)The EU crystalline silicon (c-Si) PV manufacturing industry has faced strong foreign competition in the last decade. To strive in this competitive environment and differentiate itself from the competition, the EU c-Si PV manufacturing industry needs to (1) focus on highly performing c-Si PV technologies, (2) include sustainability by design,...journal article 2023
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Lawrie, W.I.L. (author)Quantum computers based on semiconductor quantum dots are proving promising contenders for large scale quantum information processing. In particular, group IV based semiconductor hosts containing an abundance of nuclear spin-zero isotopes have made considerable headway into fulfilling the requirements of a universal quantum computer. Silicon (Si...doctoral thesis 2022
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Dutta, S. (author), Hueting, Raymond J.E. (author), Verbiest, G.J. (author)We report an avalanche-mode light-emitting transistor (AMLET) in silicon (Si), based on a lateral bipolar junction, which emits light near 760 nm optical wavelength with a record low bandwidth of 38 nm. The AMLET, designed in a CMOS-compatible silicon-on-insulator (SOI) photonics platform, is optically confined within a 0.21 ∼\μ m thick SOI...journal article 2022
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de Vrijer, T. (author), Smets, A.H.M. (author)In this abstract an overview is presented of research performed in the DISCO project, on the development of a silicon-based high voltage multijunction device for autonomous solar to fuel applications.'conference paper 2022
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Eenink, H.G.J. (author)The understanding of quantum mechanics enabled the development of technology such as transistors and has been the foundation of today’s information age. Actively using quantum mechanics to build quantum technology may cause a second revolution in handling information. However, to execute meaningful algorithms, largescale quantum computers have...doctoral thesis 2021
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Zheng, G. (author)This dissertation describes a set of experiments with the goal of creating a super-conductor-semiconductor hybrid circuit quantum electrodynamics architecture with single electron spins. Single spins in silicon quantum dots have emerged as attractive qubits for quantum computation. However, how to scale up spin qubit systems remains an open...doctoral thesis 2021
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Hueting, R. J.E. (author), De Vries, H. (author), Dutta, S. (author), Annema, A. J. (author)The CMOS silicon avalanche-mode light-emitting diode (AMLED) has emerged as a potential light source for monolithic optical interconnects. Earlier we presented a superjunction light-emitting diode (SJLED) that offers a higher electroluminescent intensity compared to a conventional AMLED because of its more uniform field distribution. However,...journal article 2021
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Gaio, N. (author)The cost and the development time of pharamecutical products are often severely affected by the in vitro tests currently employed in pharmaceutical R&D. These assays are often failing to accurately recapitulate diseases and to predict human responses to new medicines. Organ-on-Chip (OOC) devices are designed to result in advanced in vitro...doctoral thesis 2019
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Vijselaar, Wouter J.C. (author), Perez Rodriguez, P. (author), Westerik, Pieter J. (author), Tiggelaar, Roald M. (author), Smets, A.H.M. (author), Gardeniers, Han (author), Huskens, Jurriaan (author)Wireless photoelectrochemical (PEC) devices promise easy device fabrication as well as reduced losses. Here, the design and fabrication of a stand-alone ion exchange material-embedded, Si membrane-based, photoelectrochemical cell architecture with micron-sized pores is shown, to overcome the i) pH gradient formation due to long-distance ion...journal article 2019
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Xin, Yu (author), Pandraud, G. (author), French, P.J. (author)In this Letter, a slope transfer method to fabricate vertical waveguide couplers is proposed. This method utilises wet etched Si as a mask, and takes advantage of dry etching selectivity between Si and SiC, to successfully transfer the profile from the Si master into SiC. By adopting this method, a <2° slope is achieved. Such a taper can...journal article 2019
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Lee, M.J. (author), Ronchini Ximenes, A. (author), Padmanabhan, P. (author), Wang, Tzu Jui (author), Huang, Kuo Chin (author), Yamashita, Yuichiro (author), Yaung, Dun Nian (author), Charbon-Iwasaki-Charbon, E. (author)We present a high-performance back-illuminated three-dimensional stacked single-photon avalanche diode (SPAD), which is implemented in 45-nm CMOS technology for the first time. The SPAD is based on a P<sup>+</sup>/Deep N-well junction with a circular shape, for which N-well is intentionally excluded to achieve a wide depletion region, thus...journal article 2018
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Galatro, L. (author), Spirito, M. (author)In this paper, we propose a method based on 3-D electromagnetic simulations, for the characteristic impedance extraction of transmission lines employed in TRL calibration, focusing on lines integrated in silicon technologies. The accuracy achieved with TRL calibrations using the proposed characteristic impedance extraction is benchmarked...journal article 2017
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Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layersMohammadi, V. (author), Nihtianov, S. (author)The lateral gas phase diffusion length of boron atoms, LB, along silicon and boron surfaces during chemical vapor deposition(CVD) using diborane (B2H6) is reported. The value of LB is critical for reliable and uniform boron layer coverage. The presented information was obtained experimentally and confirmed analytically in the...journal article 2016
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Nanda, G. (author), Van Veldhoven, E. (author), Maas, D. (author), Sadeghian, H. (author), Alkemade, P.F.A. (author)The authors report the direct-write growth of hammerhead atomic force microscope(AFM) probes by He+beam induced deposition of platinum-carbon. In order to grow a thin nanoneedle on top of a conventional AFM probe, the authors move a focused He+beam during exposure to a PtC precursor gas. In the final growth stage, a perpendicular movement of the...journal article 2015
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Nishiguchi, K. (author), Castellanos-Gomez, A. (author), Yamaguchi, H. (author), Fujiwara, A. (author), Van der Zant, H.S.J. (author), Steele, G.A. (author)We demonstrate a tunnel diode composed of a vertical MoS2/SiO2/Si heterostructure. A MoS2 flake consisting four areas of different thicknesses functions as a gate terminal of a silicon field-effect transistor. A thin gate oxide allows tunneling current to flow between the n-type MoS2 layers and p-type Si channel. The tunneling-current...journal article 2015
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Lee, M.J. (author), Sun, P. (author), Charbon, E. (author)We report on the characterization of single-photon avalanche diodes (SPADs) fabricated in standard 140-nm silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. As a methodology for SPAD optimization, a test structure array, called SPAD farm, was realized with several junctions, guard-ring structures, dimensions,...conference paper 2015
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Lee, M.J. (author), Sun, P. (author), Charbon, E. (author)This paper reports on the first implementation of a single-photon avalanche diode (SPAD) in standard silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. The SPAD is realized in a circular shape, and it is based on a P+/N-well junction along with a P-well guard-ring structure formed by lateral diffusion of two...journal article 2015
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Bruno, A. (author), De Lange, G. (author), Asaad, S. (author), Van der Enden, K.L. (author), Langford, N.K. (author), DiCarlo, L. (author)We present microwave-frequency NbTiN resonators on silicon, systematically achieving internal quality factors above 1?M in the quantum regime. We use two techniques to reduce losses associated with two-level systems: an additional substrate surface treatment prior to NbTiN deposition to optimize the metal-substrate interface and deep reactive...journal article 2015
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Trifunovic, M. (author), Shimoda, T. (author), Ishihara, R. (author)Printing electronics has led to application areas which were formerly impossible with conventional electronic processes. Solutions are used as inks on top of large areas at room temperatures, allowing the production of fully flexible circuitry. Commonly, research in these inks have focused on organic and metal-oxide ink materials due to their...journal article 2015
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Liu, Y. (author), Salemink, H.W.M. (author)A highly sensitive sensor design based on two-dimensional photonic crystal cavity is demonstrated. The geometric structure of the cavity is modified to gain a high quality factor, which enables a sensitive refractive index sensing. A group of slots with optimized parameters is created in the cavity. The existence of the slots enhances the light...journal article 2015