Correction: Study on the controllability of the fabrication of single-crystal silicon nanopores/nanoslits with a fast-stop ionic current-monitored TSWE method (Microsystems & Nanoengineering, (2023), 9, 1, (63), 10.1038/s41378-023-00532-0)

Erratum: Electrical characteristics and photodetection mechanism of TiO₂/AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction (J. Mater. Chem. C (2023) 11 (1704–1713) DOI: 10.1039/D2TC04491A)

Microfabricated albedo insensitive sun position sensor system in silicon carbide with integrated 3D optics and CMOS electronics

Study on the controllability of the fabrication of single-crystal silicon nanopores/nanoslits with a fast-stop ionic current-monitored TSWE method

Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology

Integrated 64 pixel UV image sensor and readout in a silicon carbide CMOS technology

Electrical characteristics and photodetection mechanism of TiO₂/AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction

Visible Blind Quadrant Sun Position Sensor in a Silicon Carbide Technology

Angle Sensitive Optical Sensor for Light Source Tracker Miniaturization

FET-based integrated charge sensing in a MEM organ-on-chip platform

Enhanced Sensitivity Pt/AlGaN/GaN Heterostructure NO Sensor Using a Two-Step Gate Recess Technique

Resistive and CTAT Temperature Sensors in a Silicon Carbide CMOS Technology

Fabrication of Nanoslits with <111> Etching TSWE Method

Dual-Gate Fet-Based Charge Sensor Enhanced by In-Situ Electrode Decoration in a MEMS Organs-On-Chip Platform

Towards a Scalable Sun Position Sensor with Monolithic Integration of the 3d Optics for Miniaturized Satellite Attitude Control

The Impact of Gate Recess on the H2 Detection Properties of Pt-AlGaN/GaN HEMT Sensors

FET-based charge sensor for organs-on-chip with in-situ electrode decoration

A high responsivity and controllable recovery ultraviolet detector based on a WO₃gate AlGaN/GaN heterostructure with an integrated micro-heater

The Impact of Gate Recess on the H₂ Detection Properties of Pt-AlGaN/GaN HEMT Sensors

Low power AlGaN/GaN MEMS pressure sensor for high vacuum application