Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layers

The lateral gas phase diffusion length of boron atoms, LB, along silicon and boron surfaces during chemical vapor deposition(CVD) using diborane (B2H6) is reported. The value of LB is critical for reliable and uniform boron layer coverage. The presented information was obtained experimentally and confirmed analytically in the...

Low Temperature PureB Technology for CMOS Compatible Photodetectors

In this thesis, conventional high temperature (HT, 700 °C) PureB technology is optimized in order to fabricate detectors with improved key parameters such as the spatial uniformity of the responsivity. A novel technology for low temperature (LT, 400 °C) boron deposition is developed providing a uniform, smooth, closed LT boron layer. This...

A Kinetic Model for Chemical-Vapor Deposition of Pure-Boron Layers from Diborane

In this paper, an analytical model is established to describe the deposition kinetics and the deposition chamber characteristics that determine the deposition rates of PureB-layers grown by chemical-vapor deposition (CVD) from diborane (B2H6) as gas source on a non-rotating silicon wafer. The model takes into consideration the diffusion...

Effects of Annealing on Chemical-Vapor Deposited PureB Layers

Chemical-vapor-deposited pure boron (PureB) layers can be used as a source of p-type boron dopants for thermal diffusion into silicon during a drive-in anneal. In this work, the effect of thermally annealing PureB layers is investigated in terms of surface morphology and electrical properties. The presence of a few nanometer-thick PureB layer on...

A Simple Model describing the kinetic of CVD Deposition of Pure-Boron Layers from Diborane

In this paper, an analytical model is established to describe the deposition kinetics and the deposition chamber characteristics that determine the deposition rates of PureB-layers grown by chemicalvapor deposition (CVD) from diborane (B2H6) as gas source on a non-rotating silicon wafer. The model takes into consideration the diffusion mechanism...

Piezoelectric Pressure Sensor Based on Enhanced Thin-Film PZT Diaphragm Containing Nanocrystalline Powders

(Invited) Pure Dopant Deposition of B and Ga for Ultrashallow Junctions in Si-based Devices

Envisioning wide future relevance, work is reviewed here on the pure dopant deposition of boron (PureB), gallium (PureGa) and the combination of the two (PureGaB), as used in the fabrication of nanometer shallow p+n Si and/or Ge diodes. Focus is placed on the special properties that have put these diodes in a class apart: their ideal electrical...

An analytical kinetic model for chemical-vapor deposition of pureB layers from diborane

In this paper, an analytical model is established to describe the deposition kinetics and the deposition chamber characteristics that determine the deposition rates of pure boron (PureB-) layers grown by chemical-vapor deposition (CVD) from diborane (B2H6) as gas source on a non-rotating silicon wafer. The model takes into consideration the...

Local-Loading Effects for Pure-Boron-Layer Chemical-Vapor Deposition (abstract)

Temperature dependence of chemical-vapor deposition of pure boron layers from diborane

Surface reaction mechanisms are investigated to determine the activation energies of pure boron (PureB) layer deposition at temperatures from 350?°C to 850?°C when using chemical-vapor deposition from diborane in a commercial Si/SiGe epitaxial reactor with either hydrogen or nitrogen as carrier gas. Three distinguishable regions are identified...

Pattern Dependency of Pure-Boron-Layer Chemical-Vapor Depositions

The pattern dependency of pure-boron (PureB) layer chemicalvapor depositions (CVD) is studied with respect to the correlation between the deposition rate and features like loading effects, deposition parameters and deposition window sizes. It is shown experimentally that the oxide coverage ratio and the size of windows to the Si on patterned...

A Kinetic Model for Chemical-Vapor Deposition of Pure-Boron Layers from Diborane (abstract)

Pattern Dependency of Pure-Boron-Layer Chemical-Vapor Depositions (abstract)