Parameter calibration on post-implantation dopant diffusion

Weer woord op het protocol van proposal DET 5788

Improving the speed performance of large scale TCAD simulators for microelectronics by multygrid and parallelisation - DEL 5672

Parameter calibration for dopant post-implant diffusion

Varying characteristics of bipolar transistors with emitter contact window width

Varying characteristics of bipolar transistors with emitter contact window width

The influence of mechanical stresses on the characteristics of bipolar transistors

Improving the performance of process stimulators by multigrid (MG) methods and parallelisation. Half yearly report, working period: Jan. - June 2000 [confidential]

Improving the performance of process simulators by multigrid (MG) methods and parallelisation. Half-yearly report: January-June 1999 [vertrouwelijk]

Improving the performance of process simulators by multigrid (MG) methods and parallelisation. Annual report: September-December 1998 [vertrouwelijk]