Parameter calibration on post-implantation dopant diffusion

Weer woord op het protocol van proposal DET 5788

Varying characteristics of bipolar transistors with emitter contact window width

Parameter calibration for dopant post-implant diffusion

Varying characteristics of bipolar transistors with emitter contact window width

Improving the speed performance of large scale TCAD simulators for microelectronics by multygrid and parallelisation - DEL 5672

The influence of mechanical stresses on the characteristics of bipolar transistors

Improving the performance of process stimulators by multigrid (MG) methods and parallelisation. Half yearly report, working period: Jan. - June 2000 [confidential]

Improving the performance of process simulators by multigrid (MG) methods and parallelisation. Annual report: September-December 1998 [vertrouwelijk]

Improving the performance of process simulators by multigrid (MG) methods and parallelisation. Half-yearly report: January-June 1999 [vertrouwelijk]