The tolerance to the cumulative effects of ionizing radiation is one of the most important parameters to keep into account when selecting an EEE component for space applications. TID sensitivity is normally investigated measuring changes induced by gamma rays from 60Co sources to nominal parameters of a component or to its expected functional behavior. In this work we propose an on-chip 90Sr/90Y electron source as an alternative methodology for TID tests.60Co and 90Sr/90Y TID test setups for a complex SoC are compared in terms of complexity and of experimental results, investigating the use of a 90Sr/90Y as well as the established 60Co. We show that 90Sr allows a simpler test setup, manages to reproduce specific modes of failure obtained with 60Co and causes failures at comparable total doses. This makes 90Sr an interesting alternative to 60Co qualification and the use of untested components, to be further investigated especially for complex COTS SoCs.@en

A new methodology for Total Ionizing Dose (TID) tests is proposed. It is based on the employment of an on-chip 90 Sr/ 90 Y beta source as alternative to standard methods such as 60 Co gamma rays and electrons from LINAC. The use of a compact beta source for TID tests has several advantages. In particular, the irradiation of devices with more than one radiation source results in a better representation of the complex space radiation environment composed of several types, energies and dose-rates. In addition, the use of an easy handling beta source allows the irradiation of electronic devices without any damage to other auxiliary circuit. In this work, 90 Sr/ 90 Y beta source dosimetry and related radiation field characteristics are discussed in depth. In order to validate the proposed source for TID tests, a rather complex device such as the “SPC56EL70L5” microcontroller from ST-Microelectronics was exposed to 90 Sr/ 90 Y beta rays. The results of this test were compared to that of a previous test of another sample from the same lot with a standard gamma 60 Co source. The electronic performances following the two irradiations have been found to be in excellent agreement, by demonstrating therefore the validity of the proposed beta source for TID tests. @en

A new methodology for Total Ionizing Dose (TID) tests is proposed. It is based on the employment of an on-chip 90 Sr/ 90 Y beta source as alternative to standard methods such as 60 Co gamma rays and electrons from LINAC. The use of a compact beta source for TID tests has several advantages. In particular, the irradiation of devices with more than one radiation source results in a better representation of the complex space radiation environment composed of several types, energies and dose-rates. In addition, the use of an easy handling beta source allows the irradiation of electronic devices without any damage to other auxiliary circuit. In this work, 90 Sr/ 90 Y beta source dosimetry and related radiation field characteristics are discussed in depth. In order to validate the proposed source for TID tests, a rather complex device such as the “SPC56EL70L5” microcontroller from ST-Microelectronics was exposed to 90 Sr/ 90 Y beta rays. The results of this test were compared to that of a previous test of another sample from the same lot with a standard gamma 60 Co source. The electronic performances following the two irradiations have been found to be in excellent agreement, by demonstrating therefore the validity of the proposed beta source for TID tests. @en