The tolerance to the cumulative effects of ionizing radiation is one of the most important parameters to keep into account when selecting an EEE component for space applications. TID sensitivity is normally investigated measuring changes induced by gamma rays from 60Co sources to nominal parameters of a component or to its expected functional behavior. In this work we propose an on-chip 90Sr/90Y electron source as an alternative methodology for TID tests.60Co and 90Sr/90Y TID test setups for a complex SoC are compared in terms of complexity and of experimental results, investigating the use of a 90Sr/90Y as well as the established 60Co. We show that 90Sr allows a simpler test setup, manages to reproduce specific modes of failure obtained with 60Co and causes failures at comparable total doses. This makes 90Sr an interesting alternative to 60Co qualification and the use of untested components, to be further investigated especially for complex COTS SoCs.@en

A new methodology for Total Ionizing Dose (TID) tests is proposed. It is based on the employment of an on-chip 90 Sr/ 90 Y beta source as alternative to standard methods such as 60 Co gamma rays and electrons from LINAC. The use of a compact beta source for TID tests has several advantages. In particular, the irradiation of devices with more than one radiation source results in a better representation of the complex space radiation environment composed of several types, energies and dose-rates. In addition, the use of an easy handling beta source allows the irradiation of electronic devices without any damage to other auxiliary circuit. In this work, 90 Sr/ 90 Y beta source dosimetry and related radiation field characteristics are discussed in depth. In order to validate the proposed source for TID tests, a rather complex device such as the “SPC56EL70L5” microcontroller from ST-Microelectronics was exposed to 90 Sr/ 90 Y beta rays. The results of this test were compared to that of a previous test of another sample from the same lot with a standard gamma 60 Co source. The electronic performances following the two irradiations have been found to be in excellent agreement, by demonstrating therefore the validity of the proposed beta source for TID tests. @en

A new methodology for Total Ionizing Dose (TID) tests is proposed. It is based on the employment of an on-chip 90 Sr/ 90 Y beta source as alternative to standard methods such as 60 Co gamma rays and electrons from LINAC. The use of a compact beta source for TID tests has several advantages. In particular, the irradiation of devices with more than one radiation source results in a better representation of the complex space radiation environment composed of several types, energies and dose-rates. In addition, the use of an easy handling beta source allows the irradiation of electronic devices without any damage to other auxiliary circuit. In this work, 90 Sr/ 90 Y beta source dosimetry and related radiation field characteristics are discussed in depth. In order to validate the proposed source for TID tests, a rather complex device such as the “SPC56EL70L5” microcontroller from ST-Microelectronics was exposed to 90 Sr/ 90 Y beta rays. The results of this test were compared to that of a previous test of another sample from the same lot with a standard gamma 60 Co source. The electronic performances following the two irradiations have been found to be in excellent agreement, by demonstrating therefore the validity of the proposed beta source for TID tests. @en

The use of System-on-Chip (SoC) solutions in the design of on-board data handling systems is an important step towards further miniaturization in space. However, the Total Ionizing Dose (TID) and Single Event Effects (SEE) characterization of these complex devices present new challenges that are either not fully addressed by current testing guidelines or may result in expensive, cumbersome test configurations. In this paper we report the test setups, procedures and results for TID testing of a SoC microcontroller both using standard C60o and low-energy protons beams. This paper specifically points out the differences in the test methodology and in the challenges between TID testing with proton beam and with the conventional gamma ray irradiation. New test setup and procedures are proposed which are capable of emulating typical mission conditions (clock, bias, software, reprogramming, etc.) while keeping the test setup as simple as possible at the same time.@en

This paper presents an intended test setup and methodology for testing micro-controller SoCs against the effects of ionizing radiations. The method structure is based on a modular test sequence for test definition, coding, validation and setup. It will be illustrated by the relevant example of a microcontroller solution including lockstep options. Our methodology proposes using low-energy protons for irradiation, and this paper compares this approach with current techniques, showing how proton testing is becoming increasingly interesting, especially for ultra-deep submicron processes in proton dominated environments like low-shielded Low Earth Orbit missions or aircraft avionics. Beyond the convenience of a simplified test setup one of the main advantages of the proton irradiation approach is that it can be used for simultaneous Single Event Effects (SEE) and Total Ionizing Dose (TID) characterization, closer to the "test as you fly" approach.@en

This paper discusses radiation tests on complex System-on-Chip (SoC) controllers using Low-Energy Protons (LEPs). The aim of this novel set of guidelines is to be also applicable to System In Package (SIP) or hybrid components that are now often used to overcome printed circuit board's real estate restrictions in Hi-Rel electronics.@en

This paper discusses radiation tests on complex System-on-Chip (SoC) controllers using Low-Energy Protons (LEPs). The aim of this novel set of guidelines is to be also applicable to System In Package (SIP) or hybrid components that are now often used to overcome printed circuit board's real estate restrictions in Hi-Rel electronics.@en

This paper discusses radiation tests on complex System-on-Chip (SoC) controllers using Low-Energy Protons (LEPs). The aim of this novel set of guidelines is to be also applicable to System In Package (SIP) or hybrid components that are now often used to overcome printed circuit board's real estate restrictions in Hi-Rel electronics.@en

This paper discusses radiation tests on complex System-on-Chip (SoC) controllers using Low-Energy Protons (LEPs). The aim of this novel set of guidelines is to be also applicable to System In Package (SIP) or hybrid components that are now often used to overcome printed circuit board's real estate restrictions in Hi-Rel electronics.@en