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20 records found

Impulse-Based Scheme for Crystal-Less ULP Radios
This study describes a method of implementing a fully integrated ultra-low-power (ULP) radio for wireless sensor networks (WSNs). This is achieved using an ad hoc modulation scheme (impulse radio), with a bandwidth of 17.7 MHz in the 2.4 GHz-ISM band and a specific medium access ...

A 200 μA Duty-Cycled PLL for Wireless Sensor Nodes in 65 nm CMOS
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Low power wide spectrum optical transmitter using avalanche mode LEDs in SOI CMOS technology
This paper presents a low power monolithically integrated optical transmitter with avalanche mode light emitting diodes in a 140 nm silicon-on-insulator CMOS technology. Avalanche mode LEDs in silicon exhibit wide-spectrum electroluminescence (400 nm < λ < 850 nm), which has a si ...

A low-voltage mobility-based frequency reference for crystal-less ULP radios

Impulse based scheme for crystal-less ULP radios

On the temperature compensation of a frequency reference for crystal-less ULP wireless sensor networks

On the temperature compensation of a frequency reference for crystal-less ULP wireless sensor networks

On the temperature compensation of a frequency reference for crystal-less ULP wireless sensor networks

On the temperature compensation of a frequency reference for crystal-less ULP wireless sensor networks

On the temperature compensation of a frequency reference for crystal-less ULP wireless sensor networks

On the temperature compensation of a frequency reference for crystal-less ULP wireless sensor networks

A 1.2V 10micro Watts NPN based temperature sensor in 65nm CMOS with an inaccuracy of +-0.2 degree C from -70 degree C to 125 degree C

A 1.2V 10micro Watts NPN based temperature sensor in 65nm CMOS with an inaccuracy of +-0.2 degree C from -70 degree C to 125 degree C

A 1.2V 10micro Watts NPN based temperature sensor in 65nm CMOS with an inaccuracy of +-0.2 degree C from -70 degree C to 125 degree C

A 1.2V 10micro Watts NPN based temperature sensor in 65nm CMOS with an inaccuracy of +-0.2 degree C from -70 degree C to 125 degree C

A 1.2V 10micro Watts NPN based temperature sensor in 65nm CMOS with an inaccuracy of +-0.2 degree C from -70 degree C to 125 degree C

A 1.2V 10micro Watts NPN based temperature sensor in 65nm CMOS with an inaccuracy of +-0.2 degree C from -70 degree C to 125 degree C

A 1.2V 10micro Watts NPN based temperature sensor in 65nm CMOS with an inaccuracy of +-0.2 degree C from -70 degree C to 125 degree C

A 65 nm CMOS temperature compensated mobility based frequency reference for wireless sensor network

A 65 nm CMOS temperature compensated mobility based frequency reference for wireless sensor network