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Huaiyu Ye
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5 records found
1
Conference paper
(2025)
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Hanshi Wang, Yifan Lou, Xiaowei Zhang, Shaogang Wang, Ke Liu, Tuobei Sun, Chunjian Tan, Huaiyu Ye
In this paper, the effect of thermal stress on the reliability of the gate dielectric layer of SiC MOSFET at high short-circuit temperature is studied. By modeling and simulation, different shapes and materials (SiO2, BPSG, Si3N4) of the dielectric layer were compared regarding their stress distribution effects. Results indicate that elliptical gate structures and dual-layer ILD configurations perform better under thermal stress than conventional designs, particularly with Si3N4 as the inner layer and BPSG as the outer layer. This optimization scheme aims to enhance the reliability of SiC MOSFETs.
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In this paper, the effect of thermal stress on the reliability of the gate dielectric layer of SiC MOSFET at high short-circuit temperature is studied. By modeling and simulation, different shapes and materials (SiO2, BPSG, Si3N4) of the dielectric layer were compared regarding their stress distribution effects. Results indicate that elliptical gate structures and dual-layer ILD configurations perform better under thermal stress than conventional designs, particularly with Si3N4 as the inner layer and BPSG as the outer layer. This optimization scheme aims to enhance the reliability of SiC MOSFETs.
Conference paper
(2025)
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Xiaowe i Zhang , Jieming Lin, Chenshan Gao, Huaiyu Ye, Shenglin Zhang, Xu Liu, Peng Ding, Guoshuai Liu, Yuqi Wang, Shaogang Wang, Lingen Wang, Renhui Liu
With the rapid advancement of power semiconductor packaging technologies, Smart P2 Packagingaging has emerged as a pivotal innovation for enhancing system performance and miniaturization. This study systematically investigates the thermal conduction characteristics and stress distributions of copper-filled vias (CFVs) in Smart P2Pack frontal interconnects through coupled thermal-mechanical finite element analysis. Results indicate that increasing CFV diameter enhances vertical heat conduction but causes localized heat accumulation and stress concentration due to the low thermal conductivity of encapsulation materials, elevating interfacial failure risks. Conversely, expanding CFV pitch promotes dispersed heat flow and reduces chip temperature but concurrently lowers local structural stiffness and exacerbates stress concentration. Optimal CFV design thus requires balancing thermal diffusion performance and mechanical constraints to ensure structural reliability and thermal stability.
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With the rapid advancement of power semiconductor packaging technologies, Smart P2 Packagingaging has emerged as a pivotal innovation for enhancing system performance and miniaturization. This study systematically investigates the thermal conduction characteristics and stress distributions of copper-filled vias (CFVs) in Smart P2Pack frontal interconnects through coupled thermal-mechanical finite element analysis. Results indicate that increasing CFV diameter enhances vertical heat conduction but causes localized heat accumulation and stress concentration due to the low thermal conductivity of encapsulation materials, elevating interfacial failure risks. Conversely, expanding CFV pitch promotes dispersed heat flow and reduces chip temperature but concurrently lowers local structural stiffness and exacerbates stress concentration. Optimal CFV design thus requires balancing thermal diffusion performance and mechanical constraints to ensure structural reliability and thermal stability.
Conference paper
(2025)
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Shizhen Li, Tiancheng Tian, Jieming Lin, Yuhong Li, X. Liu, Qihang Zong, Guoqi Zhang, Huaiyu Ye
Nano-copper (nano-Cu) sintering is a promising lead-free interconnection technology for advanced electronic packaging due to its high electrical conductivity. However, practical applications are hindered by oxidation and limited sintering efficiency. Carbon nanotube (CNT) doping has been proposed to modify sintering behavior by influencing diffusion and interfacial interactions. In this study, molecular dynamics (MD) simulations and experiments were combined to investigate the effects of CNT doping on nano-Cu sintering and interconnection performance.Two MD models were constructed: a Cu NP–CNT dual-particle model to examine interfacial interactions, and a multi-particle model to evaluate overall sintering dynamics. Results show that Cu nanoparticle size significantly affects sintering, with 4 nm particles exhibiting optimal energy reduction at 500 K, while 2 nm particles show stronger bonding at 700 K due to partial melting. CNT doping in the multi-particle system increased defect density, improving bonding strength but compromising electrical and thermal conductivity.Experimentally, nano-Cu pastes doped with various CNT types and contents were tested. A 1 wt% CNT addition enhanced shear strength, while higher contents led to agglomeration, reduced uniformity, and degraded electrical performance. SEM revealed CNT accumulation at sintering necks, and XPS indicated potential interfacial reactions involving functional groups on CNTs.Overall, CNTs play a dual role in nano-Cu sintering—enhancing mechanical performance via defect formation but reducing conductivity due to interfacial resistance. Optimizing CNT surface chemistry and dispersion is essential to balance mechanical and electrical properties in future interconnect applications.
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Nano-copper (nano-Cu) sintering is a promising lead-free interconnection technology for advanced electronic packaging due to its high electrical conductivity. However, practical applications are hindered by oxidation and limited sintering efficiency. Carbon nanotube (CNT) doping has been proposed to modify sintering behavior by influencing diffusion and interfacial interactions. In this study, molecular dynamics (MD) simulations and experiments were combined to investigate the effects of CNT doping on nano-Cu sintering and interconnection performance.Two MD models were constructed: a Cu NP–CNT dual-particle model to examine interfacial interactions, and a multi-particle model to evaluate overall sintering dynamics. Results show that Cu nanoparticle size significantly affects sintering, with 4 nm particles exhibiting optimal energy reduction at 500 K, while 2 nm particles show stronger bonding at 700 K due to partial melting. CNT doping in the multi-particle system increased defect density, improving bonding strength but compromising electrical and thermal conductivity.Experimentally, nano-Cu pastes doped with various CNT types and contents were tested. A 1 wt% CNT addition enhanced shear strength, while higher contents led to agglomeration, reduced uniformity, and degraded electrical performance. SEM revealed CNT accumulation at sintering necks, and XPS indicated potential interfacial reactions involving functional groups on CNTs.Overall, CNTs play a dual role in nano-Cu sintering—enhancing mechanical performance via defect formation but reducing conductivity due to interfacial resistance. Optimizing CNT surface chemistry and dispersion is essential to balance mechanical and electrical properties in future interconnect applications.
Conference paper
(2025)
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Yihong Zhu, Lingen Wang, Yuqi Wang, Shizhen Li, Qihang Zong, Chenshan Gao, Xu Liu, Huaiyu Ye
Graphene is widely used to reinforce metal matrix composites due to its excellent physical and mechanical properties. However, its poor interfacial wettability and dispersion problems in copper-based brazing filler metals still limit its application effect.This study explored the influence of graphene on the sintering behavior and structural properties of copper nanoparticles under different doping conditions through molecular dynamics simulation combined with experimental methods. The results show that an appropriate amount of well-dispersed graphene helps promote the densification process and improve the structural stability, while graphene in the agglomerated state may have an adverse effect on the mechanical properties. This work provides theoretical support and experimental basis for optimizing the application of graphene in copper-based brazing metals.
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Graphene is widely used to reinforce metal matrix composites due to its excellent physical and mechanical properties. However, its poor interfacial wettability and dispersion problems in copper-based brazing filler metals still limit its application effect.This study explored the influence of graphene on the sintering behavior and structural properties of copper nanoparticles under different doping conditions through molecular dynamics simulation combined with experimental methods. The results show that an appropriate amount of well-dispersed graphene helps promote the densification process and improve the structural stability, while graphene in the agglomerated state may have an adverse effect on the mechanical properties. This work provides theoretical support and experimental basis for optimizing the application of graphene in copper-based brazing metals.
This study explores the potential of pressureless nano-copper sintering for power chip interconnections. As electronics evolve towards miniaturization and higher power density, traditional interconnection materials such as nano-silver, despite their excellent thermal and electrical properties, face challenges like high cost and susceptibility to electromigration. Nano-copper, with comparable electrical conductivity and superior thermal performance at a lower cost, emerges as a promising alternative. The study examines the impact of sintering atmosphere and temperature on shear strength. Results show that nitrogen-protected environments significantly enhance bonding by preventing oxidation, while samples sintered in air exhibit minimal strength due to surface oxidation. Additionally, sintering at 230°C provides stronger bonds compared to 200°C, indicating improved diffusion and bonding at higher temperatures. SEM analysis of samples sintered at 300°C demonstrates optimal bonding, with minimal voids, making 300 ° C an ideal sintering temperature for reliable power chip packaging using nano-copper.
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This study explores the potential of pressureless nano-copper sintering for power chip interconnections. As electronics evolve towards miniaturization and higher power density, traditional interconnection materials such as nano-silver, despite their excellent thermal and electrical properties, face challenges like high cost and susceptibility to electromigration. Nano-copper, with comparable electrical conductivity and superior thermal performance at a lower cost, emerges as a promising alternative. The study examines the impact of sintering atmosphere and temperature on shear strength. Results show that nitrogen-protected environments significantly enhance bonding by preventing oxidation, while samples sintered in air exhibit minimal strength due to surface oxidation. Additionally, sintering at 230°C provides stronger bonds compared to 200°C, indicating improved diffusion and bonding at higher temperatures. SEM analysis of samples sintered at 300°C demonstrates optimal bonding, with minimal voids, making 300 ° C an ideal sintering temperature for reliable power chip packaging using nano-copper.