Photoacoustic tomography defines new challenges for ultrasound detection compared to ultrasonography. To address these challenges, a sensitive, small, scalable, and broadband optomechanical ultrasound sensor (OMUS) has been developed. The OMUS is an on-chip optical ultrasound sensor, using optical interferometric ultrasound detection. It consists of an acoustic membrane on top of an optical ring resonator that modulates the optical ring resonance with high efficiency enabled by an innovative optomechanical waveguide. Raster scanning photoacoustic tomography has been demonstrated with a single-element OMUS. Based on performance and form factor, the OMUS combined with passive optical multiplexing may enable new applications in photoacoustic imaging.

Future applications of ultrasonography in (bio-)medical imaging require ultrasound sensor matrices with small sensitive elements. Promising are opto-mechanical ultrasound sensors (OMUS) based on a silicon photonic ring resonator embedded in a silicon-dioxide acoustical membrane. This work presents new OMUS modelling: acousto-mechanical non-linear FEM and photonic circuit equations. We show that initial wafer stress needs to be considered in the design: the acoustical resonance frequency changes considerably and OMUS sensitivity differs for up-or downwards buckled membranes. Simulated acoustical resonance frequency agrees well with measurements, assuming realistic SOI wafer stress. Measured sensitivity showed large device-to-device variation and simulations agree within this order of magnitude. We conclude that careful modeling of stress is necessary (b) for the design of robust and sensitive sensors.