To enhance the voltage-handling capability of a switch, the series connection of switching devices is a cost-effective method that preserves many advantages of mature low-voltage devices. Dynamic voltage imbalance and electrical isolation for the devices at the high voltage (HV) side are two important challenges associated with series connection topology. Transformer-coupled gate drivers are excellent for providing both dynamic voltage balance and high galvanic isolation. However, they can only provide the switching function at the transformer pulse frequency. To generate complex waveforms of future power-electronics-dominated grids, a switch with user-defined turn-on/off timing is required for testing grid assets under high-voltage conditions. This article presents a simple, cost-effective open-loop gate driver that overcomes this limitation by introducing two sets of complementary pulse transformers to initialize programmable frequency and duty cycle. Successful experimental verification of the series-connected SiC mosfets prototype is performed at 3.2 kV at various frequencies and duty cycles. The article also demonstrates that the measurement probes placed across series-connected mosfets significantly affect the voltage distribution and validate a compensation mechanism.

This paper comprehensively reviews several techniques that address the static and dynamic voltage balancing of series-connected MOSFETs. The effectiveness of these techniques was validated through simulations and experiments. Dynamic voltage-balancing techniques include gate signal delay adjustment methods, passive snubbers, passive clamping circuits, and hybrid solutions. Based on the experimental results, the advantages and disadvantages of each technique are investigated. Combining the gate-balancing core method with an RC snubber, which has proven both technically and commercially attractive, provides a robust solution. If the components are sorted and binned, voltage-balancing techniques may not be necessary, further enhancing the commercial viability of series-connected MOSFETs. An investigation of gate driver topologies yields one crucial conclusion: magnetically isolated gate drivers offer a simple and cost-effective solution for high-frequency (HF) applications (2.5–50 kHz) above 8 kV with an increased number of series devices. Below 8 kV, it is advantageous to move the isolation barrier from the gate drive IC to an optocoupler and isolated supply, allowing for a simple design with commercially available components.